ɍȾɄ 539.216.2:532.64:538.975

Ɇ. Ɇ. Ʉɨɥɟɧɞɨɜɫɤɢɣ, ɋ. ɂ. Ȼɨɝɚɬɵɪɟɧɤɨ, Ⱥ. ɉ. Ʉɪɵɲɬɚɥɶ, ɇ. Ɍ. Ƚɥɚɞɤɢɯ, ɋ. ȼ. Ⱦɭɤɚɪɨɜ, Ⱥ. Ʌ. ɋɚɦɫɨɧɢɤ, Ɋ. ȼ. ɋɭɯɨɜ* ɉȿɊȿɈɏɅȺɀȾȿɇɂȿ ɉɊɂ ɄɊɂɋɌȺɅɅɂɁȺɐɂɂ ɉɅȿɇɈɄ ȼɂɋɆɍɌȺ ɇȺ ȽȿɊɆȺɇɂȿȼɈɃ ɉɈȾɅɈɀɄȿ
ɂɫɫɥɟɞɨɜɚɧɵ ɦɟɯɚɧɢɡɦ ɤɨɧɞɟɧɫɚɰɢɢ ɜ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɟ Bi—Ge ɢ ɢɡɦɟɧɟɧɢɟ ɷɥɟɤɬɪɢɱɟɫɤɨɝɨ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɜ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɟ Ge—Bi—Ge ɜ ɯɨɞɟ ɰɢɤɥɨɜ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ. Ɉɩɪɟɞɟɥɟɧɵ ɜɟɥɢɱɢɧɚ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɜɢɫɦɭɬɚ ɜ ɤɨɧɬɚɤɬɟ ɫ ɚɦɨɪɮɧɵɦ ɢ ɩɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɢɦ ɝɟɪɦɚɧɢɟɦ — 94 K ɢ ɭɝɨɥ ɫɦɚɱɢɜɚɧɢɹ ɜ ɨɫɬɪɨɜɤɨɜɵɯ ɩɥɟɧɤɚɯ ɜɢɫɦɭɬɚ ɧɚ ɚɦɨɪɮɧɨɣ ɝɟɪɦɚɧɢɟɜɨɣ ɩɨɞɥɨɠɤɟ — 68°. ɉɨɥɭɱɟɧɧɵɟ ɪɟɡɭɥɶɬɚɬɵ ɯɨɪɨɲɨ ɫɨɝɥɚɫɭɸɬɫɹ ɫ ɢɦɟɸɳɢɦɢɫɹ ɞɚɧɧɵɦɢ ɩɨ ɨɛɨɛɳɟɧɧɨɣ ɡɚɜɢɫɢɦɨɫɬɢ ɜɟɥɢɱɢɧɵ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɨɬ ɭɝɥɚ ɫɦɚɱɢɜɚɧɢɹ ɞɥɹ ɞɪɭɝɢɯ ɤɨɧɬɚɤɬɧɵɯ ɫɢɫɬɟɦ.

ȼɜɟɞɟɧɢɟ Ɂɧɚɧɢɟ ɫɬɟɩɟɧɢ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɦɟɬɚɥɥɨɜ ɢ ɫɩɥɚɜɨɜ ɧɟɨɛɯɨɞɢɦɨ ɤɚɤ ɞɥɹ ɪɚɡɜɢɬɢɹ ɮɭɧɞɚɦɟɧɬɚɥɶɧɵɯ ɩɪɟɞɫɬɚɜɥɟɧɢɣ ɨ ɡɚɪɨɞɵɲɟɨɛɪɚɡɨɜɚɧɢɢ ɩɪɢ ɮɚɡɨɜɵɯ ɩɟɪɟɯɨɞɚɯ ɠɢɞɤɨɫɬɶ—ɤɪɢɫɬɚɥɥ, ɬɚɤ ɢ ɞɥɹ ɪɟɲɟɧɢɹ ɩɪɢɤɥɚɞɧɵɯ ɡɚɞɚɱ ɩɨ ɭɥɭɱɲɟɧɢɸ ɫɜɨɣɫɬɜ ɞɢɫɩɟɪɫɧɵɯ ɢ ɚɦɨɪɮɧɵɯ ɦɚɬɟɪɢɚɥɨɜ, ɯɚɪɚɤɬɟɪɢɫɬɢɤɢ ɤɨɬɨɪɵɟ ɡɚɜɢɫɹɬ ɨɬ ɩɪɨɰɟɫɫɨɜ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ. Ɋɚɧɟɟ ɞɥɹ ɨɩɪɟɞɟɥɟɧɢɹ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɛɵɥ ɪɚɡɪɚɛɨɬɚɧ ɦɟɬɨɞ, ɨɫɧɨɜɚɧɧɵɣ ɧɚ ɢɫɫɥɟɞɨɜɚɧɢɢ ɡɚɜɢɫɢɦɨɫɬɢ ɦɢɤɪɨɫɬɪɭɤɬɭɪɵ ɨɫɬɪɨɜɤɨɜɵɯ ɜɚɤɭɭɦɧɵɯ ɤɨɧɞɟɧɫɚɬɨɜ ɨɬ ɬɟɦɩɟɪɚɬɭɪɵ ɩɨɞɥɨɠɤɢ ɩɪɢ ɤɨɧɞɟɧɫɚɰɢɢ [1]. ɗɬɚ ɦɟɬɨɞɢɤɚ ɜɟɫɶɦɚ ɷɮɮɟɤɬɢɜɧɚ ɞɥɹ ɢɡɭɱɟɧɢɹ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɦɟɬɚɥɥɨɜ ɧɚ ɧɟɣɬɪɚɥɶɧɵɯ, ɤɚɤ ɩɪɚɜɢɥɨ, ɚɦɨɪɮɧɵɯ ɩɨɞɥɨɠɤɚɯ, ɬɨ ɟɫɬɶ ɤɨɝɞɚ ɭɝɨɥ ɫɦɚɱɢɜɚɧɢɹ θ ɛɨɥɶɲɟ 90°. ȿɫɥɢ ɜ ɤɨɧɬɚɤɬɧɨɣ ɫɢɫɬɟɦɟ ɢɦɟɟɬ ɦɟɫɬɨ ɫɢɥɶɧɨɟ ɜɡɚɢɦɨɞɟɣɫɬɜɢɟ ɤɨɦɩɨɧɟɧɬɨɜ (θ < 90°), ɬɨ ɨɩɪɟɞɟɥɟɧɢɟ ɝɪɚɧɢɰɵ ɫɦɟɧɵ ɦɟɯɚɧɢɡɦɚ ɤɨɧɞɟɧɫɚɰɢɢ ɡɚɬɪɭɞɧɟɧɨ ɢɡ-ɡɚ ɧɟɡɧɚɱɢɬɟɥɶɧɵɯ ɪɚɡɥɢɱɢɣ ɜ ɦɨɪɮɨɥɨɝɢɱɟɫɤɨɣ ɫɬɪɭɤɬɭɪɟ ɤɨɧɞɟɧɫɚɬɚ. Ʉɪɨɦɟ ɬɨɝɨ, ɞɚɧɧɵɣ ɦɟɬɨɞ ɜɟɫɶɦɚ ɱɭɜɫɬɜɢɬɟɥɟɧ ɤ ɜɚɤɭɭɦɧɵɦ ɭɫɥɨɜɢɹɦ ɩɪɟɩɚɪɢɪɨɜɚɧɢɹ ɩɥɟɧɨɤ [2]. ȼ ɪɚɛɨɬɟ [3] ɞɥɹ ɨɩɪɟɞɟɥɟɧɢɹ ɫɬɟɩɟɧɢ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɜ ɛɢɧɚɪɧɨɣ ɫɢɫɬɟɦɟ Al—Bi, ɤɨɦɩɨɧɟɧɬɵ ɤɨɬɨɪɨɣ ɨɛɪɚɡɭɸɬ ɮɚɡɨɜɭɸ ɞɢɚɝɪɚɦɦɭ ɷɜɬɟɤɬɢɱɟɫɤɨɝɨ ɬɢɩɚ, ɩɪɟɞɥɨɠɟɧ ɧɨɜɵɣ ɦɟɬɨɞ, ɨɫɧɨɜɚɧɧɵɣ ɧɚ ɢɫɩɨɥɶɡɨɜɚɧɢɢ ɫɥɨɢɫɬɵɯ ɩɥɟɧɨɱɧɵɯ ɫɢɫɬɟɦ Al—Bi—Al, ɜ ɤɨɬɨɪɵɯ ɬɨɧɤɚɹ ɩɥɟɧɤɚ ɛɨɥɟɟ ɥɟɝɤɨɩɥɚɜɤɨɝɨ ɤɨɦɩɨɧɟɧɬɚ (Bi) ɧɚɯɨɞɢɬɫɹ ɦɟɠɞɭ ɞɜɭɦɹ ɬɨɥɫɬɵɦɢ ɩɥɟɧɤɚɦɢ ɛɨɥɟɟ ɬɭɝɨɩɥɚɜɤɨɝɨ (Al). Ɍɚɤɢɟ ɫɢɫɬɟɦɵ
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Ɇ. Ɇ. Ʉɨɥɟɧɞɨɜɫɤɢɣ — ɦɥɚɞɲɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɏɚɪɶɤɨɜɫɤɢɣ ɧɚɰɢɨɧɚɥɶɧɵɣ ɭɧɢɜɟɪɫɢɬɟɬ ɢɦ. ȼ. ɇ. Ʉɚɪɚɡɢɧɚ; ɋ. ɂ. Ȼɨɝɚɬɵɪɟɧɤɨ — ɤɚɧɞɢɞɚɬ ɮɢɡɢɤɨ-ɦɚɬɟɦɚɬɢɱɟɫɤɢɯ ɧɚɭɤ, ɫɬɚɪɲɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɬɚɦ ɠɟ; Ⱥ. ɉ. Ʉɪɵɲɬɚɥɶ — ɤɚɧɞɢɞɚɬ ɮɢɡɢɤɨɦɚɬɟɦɚɬɢɱɟɫɤɢɯ ɧɚɭɤ, ɫɬɚɪɲɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɬɚɦ ɠɟ; ɇ. Ɍ. Ƚɥɚɞɤɢɯ — ɞɨɤɬɨɪ ɮɢɡɢɤɨ-ɦɚɬɟɦɚɬɢɱɟɫɤɢɯ ɧɚɭɤ, ɩɪɨɮɟɫɫɨɪ, ɬɚɦ ɠɟ; ɋ. ȼ. Ⱦɭɤɚɪɨɜ — ɤɚɧɞɢɞɚɬ ɮɢɡɢɤɨɦɚɬɟɦɚɬɢɱɟɫɤɢɯ ɧɚɭɤ, ɜɟɞɭɳɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɬɚɦ ɠɟ; Ⱥ. Ʌ. ɋɚɦɫɨɧɢɤ — ɤɚɧɞɢɞɚɬ ɮɢɡɢɤɨ-ɦɚɬɟɦɚɬɢɱɟɫɤɢɯ ɧɚɭɤ, ɫɬɚɪɲɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɬɚɦ ɠɟ; Ɋ. ȼ. ɋɭɯɨɜ — ɦɥɚɞɲɢɣ ɧɚɭɱɧɵɣ ɫɨɬɪɭɞɧɢɤ, ɬɚɦ ɠɟ.

© Ɇ. Ɇ. Ʉɨɥɟɧɞɨɜɫɤɢɣ, ɋ. ɂ. Ȼɨɝɚɬɵɪɟɧɤɨ, Ⱥ. ɉ. Ʉɪɵɲɬɚɥɶ, ɇ. Ɍ. Ƚɥɚɞɤɢɯ, ɋ. ȼ. Ⱦɭɤɚɪɨɜ,
Ⱥ. Ʌ. ɋɚɦɫɨɧɢɤ, Ɋ. ȼ. ɋɭɯɨɜ, 2007

ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

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ɩɨɥɭɱɚɸɬ ɜ ɩɪɨɰɟɫɫɟ ɩɨɫɥɟɞɨɜɚɬɟɥɶɧɨɣ ɤɨɧɞɟɧɫɚɰɢɢ ɤɨɦɩɨɧɟɧɬɨɜ ɜ ɜɚɤɭɭɦɟ, ɱɬɨ ɩɨɡɜɨɥɹɟɬ ɢɡɛɟɠɚɬɶ ɜɥɢɹɧɢɹ ɪɚɡɥɢɱɧɨɝɨ ɪɨɞɚ ɝɚɡɨɜɵɯ ɢ ɬɜɟɪɞɵɯ ɧɟɪɚɫɬɜɨɪɢɦɵɯ ɩɪɢɦɟɫɟɣ ɧɚ ɩɟɪɟɨɯɥɚɠɞɟɧɢɟ, ɚ ɟɞɢɧɫɬɜɟɧɧɨɣ ɬɜɟɪɞɨɣ ɩɪɢɦɟɫɶɸ, ɤɨɬɨɪɚɹ ɢ ɨɩɪɟɞɟɥɹɟɬ ɟɝɨ ɜɟɥɢɱɢɧɭ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ, ɹɜɥɹɟɬɫɹ ɩɥɟɧɤɚ ɛɨɥɟɟ ɬɭɝɨɩɥɚɜɤɨɝɨ ɤɨɦɩɨɧɟɧɬɚ, ɜɵɩɨɥɧɹɸɳɚɹ ɪɨɥɶ ɦɚɬɪɢɰɵ. ɂɡɦɟɪɟɧɢɟ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɹ ɜ ɫɢɫɬɟɦɟ Al—Bi—Al ɜ ɩɪɨɰɟɫɫɟ ɧɚɝɪɟɜɚ ɢ ɨɯɥɚɠɞɟɧɢɹ ɩɨɡɜɨɥɢɥɨ ɧɚɞɟɠɧɨ ɢ ɜɨɫɩɪɨɢɡɜɨɞɢɦɨ ɪɟɝɢɫɬɪɢɪɨɜɚɬɶ ɬɟɦɩɟɪɚɬɭɪɵ ɩɥɚɜɥɟɧɢɹ ɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɷɜɬɟɤɬɢɤɢ ɧɚ ɨɫɧɨɜɟ ɛɨɥɟɟ ɥɟɝɤɨɩɥɚɜɤɨɝɨ ɤɨɦɩɨɧɟɧɬɚ. ɉɪɟɞɫɬɚɜɥɹɥɨɫɶ ɰɟɥɟɫɨɨɛɪɚɡɧɵɦ ɢɫɫɥɟɞɨɜɚɧɢɟ ɜɨɡɦɨɠɧɨɫɬɟɣ ɭɤɚɡɚɧɧɨɝɨ ɦɟɬɨɞɚ ɩɪɢɦɟɧɢɬɟɥɶɧɨ ɤ ɞɪɭɝɢɦ ɫɢɫɬɟɦɚɦ. Ɉɛɴɟɤɬɵ ɢ ɦɟɬɨɞɢɤɚ ɷɤɫɩɟɪɢɦɟɧɬɚ ȼ ɤɚɱɟɫɬɜɟ ɨɛɴɟɤɬɨɜ ɢɫɫɥɟɞɨɜɚɧɢɹ ɢɫɩɨɥɶɡɨɜɚɥɢ ɤɨɧɞɟɧɫɢɪɨɜɚɧɧɵɟ ɜ ɜɚɤɭɭɦɟ ɩɥɟɧɤɢ ɜɢɫɦɭɬɚ ɧɚ ɩɨɜɟɪɯɧɨɫɬɢ ɢɥɢ ɦɟɠɞɭ ɬɨɥɫɬɵɦɢ ɩɥɟɧɤɚɦɢ ɝɟɪɦɚɧɢɹ. Ɍɚɤɨɣ ɜɵɛɨɪ ɨɛɭɫɥɨɜɥɟɧ ɬɟɦ, ɱɬɨ ɭɤɚɡɚɧɧɵɟ ɤɨɦɩɨɧɟɧɬɵ ɨɛɪɚɡɭɸɬ ɮɚɡɨɜɭɸ ɞɢɚɝɪɚɦɦɭ ɷɜɬɟɤɬɢɱɟɫɤɨɝɨ ɬɢɩɚ, ɯɚɪɚɤɬɟɪɢɡɭɸɳɭɸɫɹ ɩɪɚɤɬɢɱɟɫɤɢ ɩɨɥɧɵɦ ɨɬɫɭɬɫɬɜɢɟɦ ɪɚɫɬɜɨɪɢɦɨɫɬɢ ɤɨɦɩɨɧɟɧɬɨɜ ɜ ɬɜɟɪɞɨɦ ɫɨɫɬɨɹɧɢɢ ɩɪɢ ɧɟɨɝɪɚɧɢɱɟɧɧɨɣ ɪɚɫɬɜɨɪɢɦɨɫɬɢ ɜ ɠɢɞɤɨɦ. Ʉɪɨɦɟ ɬɨɝɨ, ɬɚɤɢɟ ɫɢɫɬɟɦɵ ɲɢɪɨɤɨ ɩɪɢɦɟɧɹɸɬɫɹ ɜ ɦɢɤɪɨ- ɢ ɧɚɧɨɷɥɟɤɬɪɨɧɢɤɟ. Ɉɛɪɚɡɰɵ ɞɥɹ ɢɫɫɥɟɞɨɜɚɧɢɣ ɩɪɟɩɚɪɢɪɨɜɚɥɢ ɬɟɪɦɢɱɟɫɤɢɦ ɢɫɩɚɪɟɧɢɟɦ ɤɨɦɩɨɧɟɧɬɨɜ ɜ ɜɚɤɭɭɦɟ ɩɨ ɦɟɬɨɞɢɤɚɦ, ɩɨɞɪɨɛɧɨ ɨɩɢɫɚɧɧɵɦ ɜ ɪɚɛɨɬɚɯ [1, 3]. ɉɥɟɧɤɢ ɜɢɫɦɭɬɚ ɧɚ ɚɦɨɪɮɧɨɣ ɝɟɪɦɚɧɢɟɜɨɣ ɩɨɞɥɨɠɤɟ ɤɨɧɞɟɧɫɢɪɨɜɚɥɢ ɜ ɜɚɤɭɭɦɧɨɣ ɭɫɬɚɧɨɜɤɟ ɫ ɛɟɡɦɚɫɥɹɧɨɣ ɫɢɫɬɟɦɨɣ ɨɬɤɚɱɤɢ ɫ ɪɚɛɨɱɢɦ ɞɚɜɥɟɧɢɟɦ ɨɫɬɚɬɨɱɧɵɯ ɝɚɡɨɜ 10-5—10-7 ɉɚ. Ɇɟɬɨɞ ɨɩɪɟɞɟɥɟɧɢɹ ɫ ɩɨɦɨɳɶɸ ɢɡɦɟɪɟɧɢɹ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɬɟɩɟɧɢ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɜ ɫɥɨɢɫɬɵɯ ɩɥɟɧɨɱɧɵɯ ɫɢɫɬɟɦɚɯ, ɤɚɤ ɩɨɤɚɡɚɥɢ ɜɵɩɨɥɧɟɧɧɵɟ ɜ ɪɚɛɨɬɟ [3] ɢɫɫɥɟɞɨɜɚɧɢɹ, ɫɥɚɛɨ ɱɭɜɫɬɜɢɬɟɥɟɧ ɤ ɜɚɤɭɭɦɧɵɦ ɭɫɥɨɜɢɹɦ, ɩɨɷɬɨɦɭ ɩɪɟɩɚɪɢɪɨɜɚɧɢɟ ɫɥɨɢɫɬɵɯ ɫɢɫɬɟɦ Ge—Bi—Ge ɢ ɢɡɦɟɪɟɧɢɹ ɢɯ ɷɥɟɤɬɪɢɱɟɫɤɨɝɨ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɩɪɨɜɨɞɢɥɢ ɜ ɫɬɚɧɞɚɪɬɧɨɣ ɜɚɤɭɭɦɧɨɣ ɭɫɬɚɧɨɜɤɟ ȼɍɉ-5Ɇ ɫ ɪɚɛɨɱɢɦ ɞɚɜɥɟɧɢɟɦ 10-3—10-4 ɉɚ. Ɍɨɥɳɢɧɵ ɩɥɟɧɨɤ ɤɨɧɬɪɨɥɢɪɨɜɚɥɢ ɜ ɩɪɨɰɟɫɫɟ ɢɯ ɤɨɧɞɟɧɫɚɰɢɢ ɤɜɚɪɰɟɜɵɦ ɞɚɬɱɢɤɨɦ ɫ ɪɟɡɨɧɚɧɫɧɨɣ ɱɚɫɬɨɬɨɣ 4,7 ɆȽɰ. ɋɬɪɭɤɬɭɪɭ ɢ ɦɨɪɮɨɥɨɝɢɸ ɩɥɟɧɨɤ ɢɫɫɥɟɞɨɜɚɥɢ ɩɪɢ ɩɨɦɨɳɢ ɩɪɨɫɜɟɱɢɜɚɸɳɟɣ ɷɥɟɤɬɪɨɧɧɨɣ ɦɢɤɪɨɫɤɨɩɢɢ ɢ ɪɟɧɬɝɟɧɨɜɫɤɨɣ ɞɢɮɪɚɤɬɨɦɟɬɪɢɢ. Ɋɟɡɭɥɶɬɚɬɵ ɢ ɢɯ ɨɛɫɭɠɞɟɧɢɟ 1. ɋɢɫɬɟɦɚ Bi—Ge ɗɥɟɤɬɪɨɧɧɨ-ɦɢɤɪɨɫɤɨɩɢɱɟɫɤɨɟ ɢɡɨɛɪɚɠɟɧɢɟ ɱɚɫɬɢɰ Bi, ɫɤɨɧɞɟɧɫɢɪɨɜɚɧɧɵɯ ɩɪɢ ɪɚɡɥɢɱɧɵɯ ɬɟɦɩɟɪɚɬɭɪɚɯ ɧɚ ɝɟɪɦɚɧɢɟɜɨɣ ɩɨɞɥɨɠɤɟ, ɩɪɢɜɟɞɟɧɨ ɧɚ ɪɢɫ. 1. ɂɡ ɪɢɫ. 1, ɚ ɜɢɞɧɨ, ɱɬɨ ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɟ ɩɨɞɥɨɠɤɢ 434 K ɩɥɟɧɤɚ ɜɢɫɦɭɬɚ ɢɦɟɟɬ ɩɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɭɸ ɫɬɪɭɤɬɭɪɭ, ɹɜɥɹɸɳɭɸɫɹ ɪɟɡɭɥɶɬɚɬɨɦ ɤɨɧɞɟɧɫɚɰɢɢ ɩɨ ɦɟɯɚɧɢɡɦɭ ɩɚɪ—ɤɪɢɫɬɚɥɥ. ɉɪɢ ɬɟɦɩɟɪɚɬɭɪɟ ɩɨɞɥɨɠɤɢ 473 K ɩɪɨɢɫɯɨɞɢɬ ɤɨɧɞɟɧɫɚɰɢɹ ɩɨ ɦɟɯɚɧɢɡɦɭ ɩɚɪ—ɠɢɞɤɨɫɬɶ (ɪɢɫ. 1, ɜ). Ƚɪɚɧɢɰɚ ɫɦɟɧɵ ɦɟɯɚɧɢɡɦɚ ɤɨɧɞɟɧɫɚɰɢɢ ɩɨɤɚɡɚɧɚ ɧɚ ɪɢɫ. 1, ɛ, ɝɞɟ ɨɬɱɟɬɥɢɜɨ ɜɢɞɧɨ ɧɚɥɢɱɢɟ ɱɚɫɬɢɰ ɫɮɨɪɦɢɪɨɜɚɜɲɢɯɫɹ ɩɨ ɦɟɯɚɧɢɡɦɚɦ ɩɚɪ— ɤɪɢɫɬɚɥɥ ɢ ɩɚɪ—ɠɢɞɤɨɫɬɶ. Ɍɚɤɢɦ ɨɛɪɚɡɨɦ, ɩɨɥɨɠɟɧɢɟ ɷɬɨɣ ɝɪɚɧɢɰɵ ɫɨɨɬɜɟɬɫɬɜɭɟɬ ɬɟɦɩɟɪɚɬɭɪɟ ɫɦɟɧɵ ɦɟɯɚɧɢɡɦɚ ɤɨɧɞɟɧɫɚɰɢɢ ɢɥɢ ɬɟɦɩɟɪɚɬɭ-

56

ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

Ɋɢɫ. 1. ɗɥɟɤɬɪɨɧɧɨ-ɦɢɤɪɨɫɤɨɩɢɱɟɫɤɨɟ ɢɡɨɛɪɚɠɟɧɢɟ ɤɨɧɞɟɧɫɢɪɨɜɚɧɧɵɯ ɧɚ ɝɟɪɦɚɧɢɟɜɨɣ ɩɨɞɥɨɠɤɟ ɩɪɢ 434 (ɚ), 451 (ɛ) ɢ 473 K (ɜ)

ɩɥɟɧɨɤ Bi, ɬɟɦɩɟɪɚɬɭɪɟ

Fig. 1. Electron-microscopy images of Bi films on Ge substrate at different temperatures 434 (ɚ), 451 (ɛ) and 473 K (ɜ)

ɪɟ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ Tg ɩɟɪɟɨɯɥɚɠɞɟɧɧɨɣ ɮɚɡɵ ɧɚ ɨɫɧɨɜɟ ɜɢɫɦɭɬɚ ɜ ɤɨɧɬɚɤɬɟ ɫ ɩɥɟɧɤɨɣ ɝɟɪɦɚɧɢɹ. ɗɬɚ ɬɟɦɩɟɪɚɬɭɪɚ ɫɨɫɬɚɜɥɹɟɬ 451 K. Ⱦɥɹ ɫɨɩɨɫɬɚɜɥɟɧɢɹ ɫ ɥɢɬɟɪɚɬɭɪɧɵɦɢ ɞɚɧɧɵɦɢ ɛɨɥɟɟ ɭɞɨɛɧɨɣ ɹɜɥɹɟɬɫɹ ɜɟɥɢɱɢɧɚ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ΔT (ΔT = Ts – Tg, Ts — ɬɟɦɩɟɪɚɬɭɪɚ ɩɥɚɜɥɟɧɢɹ ɞɥɹ ɦɚɤɪɨɫɤɨɩɢɱɟɫɤɢɯ ɨɛɪɚɡɰɨɜ), ɪɚɜɧɚɹ 92 K. ɗɥɟɤɬɪɨɧɨ- ɢ ɪɟɧɬɝɟɧɨɝɪɚɮɢɱɟɫɤɢɟ ɢɫɫɥɟɞɨɜɚɧɢɹ ɩɥɟɧɨɤ ɝɟɪɦɚɧɢɹ ɭɤɚɡɵɜɚɸɬ ɧɚ ɟɟ ɚɦɨɪɮɧɭɸ ɫɬɪɭɤɬɭɪɭ (ɪɢɫ. 2, ɚ), ɱɬɨ ɫɨɝɥɚɫɭɟɬɫɹ ɫ ɞɚɧɧɵɦɢ ɪɚɛɨɬɵ [4]. Ɍɚɤɢɦ ɨɛɪɚɡɨɦ, ɩɨɥɭɱɟɧɧɨɟ ɡɧɚɱɟɧɢɟ ɫɬɟɩɟɧɢ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɱɚɫɬɢɰ ɜɢɫɦɭɬɚ ɫɨɨɬɜɟɬɫɬɜɭɟɬ ɫɥɭɱɚɸ ɜɢɫɦɭɬ—ɚɦɨɪɮɧɵɣ ɝɟɪɦɚɧɢɣ. ɂɡɜɟɫɬɧɨ, ɱɬɨ ɬɟɦɩɟɪɚɬɭɪɚ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɨɫɬɪɨɜɤɨɜ ɡɚɜɢɫɢɬ ɨɬ ɯɚɪɚɤɬɟɪɚ ɜɡɚɢɦɨɞɟɣɫɬɜɢɹ ɢɯ ɫ ɩɨɞɥɨɠɤɨɣ, ɦɟɪɨɣ ɤɨɬɨɪɨɝɨ ɜ ɩɟɪɜɨɦ ɩɪɢɛɥɢɠɟɧɢɢ ɹɜɥɹɟɬɫɹ ɤɪɚɟɜɨɣ ɭɝɨɥ ɫɦɚɱɢɜɚɧɢɹ. ɉɨɷɬɨɦɭ ɨɞɧɨɜɪɟɦɟɧɧɨ ɫ ɢɡɭɱɟɧɢɟɦ ɦɢɤɪɨɫɬɪɭɤɬɭɪɵ ɩɥɟɧɨɤ ɩɪɨɜɨɞɢɥɢ ɢɡɦɟɪɟɧɢɹ ɤɪɚɟɜɵɯ ɭɝɥɨɜ ɫɦɚɱɢɜɚɧɢɹ ɫ ɩɨɦɨɳɶɸ ɪɚɧɟɟ ɪɚɡɪɚɛɨɬɚɧɧɵɯ ɦɟɬɨɞɨɜ ɫɜɟɪɬɤɢ ɢ ɧɚɤɥɨɧ-

ɚ

ɛ

Ɋɢɫ. 2. Ɇɢɤɪɨɞɢɮɪɚɤɰɢɹ ɩɥɟɧɨɤ ɝɟɪɦɚɧɢɹ ɧɟɩɨɫɪɟɞɫɬɜɟɧɧɨ ɩɨɫɥɟ ɩɪɟɩɚɪɢɪɨɜɚɧɢɹ (ɚ) ɢ ɩɨɫɥɟ ɨɬɠɢɝɚ ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɟ 610 K ɜ ɬɟɱɟɧɢɟ 15 ɱ (ɛ)
Fig. 2. Microdiffraction of Ge films directly after preparation (a) and after annealing at 610 K during 15 h (ɛ)
ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

57

ɚ

ɛ

Ɋɢɫ. 3. ɗɥɟɤɬɪɨɧɧɨ-ɦɢɤɪɨɫɤɨɩɢɱɟɫɤɨɟ ɢɡɨɛɪɚɠɟɧɢɟ ɨɫɬɪɨɜɤɨɜɨɝɨ ɤɨɧɞɟɧɫɚɬɚ (ɚ, ×20 000) ɢ ɨɬɞɟɥɶɧɨɝɨ ɨɫɬɪɨɜɤɚ ɜɢɫɦɭɬɚ (ɛ, ×40 000) ɧɚ ɧɚɤɥɨɧɧɵɯ ɭɱɚɫɬɤɚɯ ɩɥɟɧɤɢ ɝɟɪɦɚɧɢɹ
Fig. 3. Electron-microscopy images of island film (ɚ, ×20 000) and single Bi particle (ɛ, ×40 000) on tilted regions of Ge film

ɧɨɝɨ ɧɚɛɥɸɞɟɧɢɹ [5]. ɉɨ ɷɥɟɤɬɪɨɧɧɨ-ɦɢɤɪɨɫɤɨɩɢɱɟɫɤɢɦ ɢɡɨɛɪɚɠɟɧɢɹɦ ɩɪɨɮɢɥɟɣ ɤɚɩɟɥɶ Bi ɧɚ Ge ɩɨɞɥɨɠɤɟ ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɟ 473 K ɨɩɪɟɞɟɥɟɧɚ ɜɟɥɢɱɢɧɚ ɭɝɥɚ ɫɦɚɱɢɜɚɧɢɹ ș = 68° (ɪɢɫ. 3). 2. ɋɢɫɬɟɦɚ Ge—Bi—Ge ɂɡɭɱɟɧɢɟ ɷɥɟɤɬɪɢɱɟɫɤɨɝɨ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ Ge—Bi—Ge ɜ ɩɨɫɥɟɞɨɜɚɬɟɥɶɧɵɯ ɰɢɤɥɚɯ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ ɩɨɤɚɡɚɥɨ, ɱɬɨ ɩɨ ɫɪɚɜɧɟɧɢɸ ɫ ɩɟɪɜɵɦɢ ɰɢɤɥɚɦɢ, ɩɪɨɜɟɞɟɧɧɵɦɢ ɧɟɩɨɫɪɟɞɫɬɜɟɧɧɨ ɩɨɫɥɟ ɩɪɟɩɚɪɢɪɨɜɚɧɢɹ ɨɛɪɚɡɰɨɜ, ɢɡɦɟɧɟɧɢɟ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫ ɬɟɦɩɟɪɚɬɭɪɨɣ ɩɪɢɨɛɪɟɬɚɟɬ ɡɧɚɱɢɬɟɥɶɧɵɟ ɤɨɥɢɱɟɫɬɜɟɧɧɵɟ ɢ ɤɚɱɟɫɬɜɟɧɧɵɟ ɨɬɥɢɱɢɹ (ɪɢɫ. 4 ɢ 5). ȼɢɞɧɨ (ɪɢɫ. 4), ɱɬɨ ɢɡɦɟɧɟɧɢɟ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɩɪɢ ɩɟɪɜɨɦ ɰɢɤɥɟ ɧɚɝɪɟɜɚ ɧɟɫɤɨɥɶɤɨ ɜɵɲɟ ɬɟɦɩɟɪɚɬɭɪɵ ɩɥɚɜɥɟɧɢɹ ɜɢɫɦɭɬɚ ɱɬɨ ɯɚɪɚɤɬɟɪɧɨ ɞɥɹ ɩɨɥɭɩɪɨɜɨɞɧɢɤɨɜɵɯ ɦɚɬɟɪɢɚɥɨɜ ɢ ɧɢɤɚɤɢɯ ɷɮɮɟɤɬɨɜ, ɜɵɡɜɚɧɧɵɯ ɮɚɡɨɜɵɦ ɩɟɪɟɯɨɞɨɦ ɩɥɚɜɥɟɧɢɟ—ɤɪɢɫɬɚɥɥɢɡɚɰɢɹ ɜ ɞɚɧɧɨɣ ɫɢɫɬɟɦɟ, ɤɪɨɦɟ ɝɢɫɬɟɪɟɡɢɫɚ, ɜɟɪɨɹɬɧɨ, ɨɛɭɫɥɨɜɥɟɧɧɨɝɨ ɤɪɢɫɬɚɥɥɢɡɚɰɢɟɣ, ɧɟ ɜɵɹɜɥɹɟɬɫɹ. ɉɨɫɥɟ ɜɬɨɪɨɝɨ ɢ ɬɪɟɬɶɟɝɨ ɰɢɤɥɨɜ ɧɚɛɥɸɞɚɸɬɫɹ ɢɡɥɨɦɵ ɧɚ ɬɟɦɩɟɪɚɬɭɪɧɨɣ ɡɚɜɢɫɢɦɨɫɬɢ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɩɪɢ ɧɚɝɪɟɜɟ ɢ ɨɯɥɚɠɞɟɧɢɢ, ɤɨɬɨɪɵɟ, ɜɟɪɨɹɬɧɨ, ɫɨɨɬɜɟɬɫɬɜɭɸɬ ɬɟɦɩɟɪɚɬɭɪɟ ɩɥɚɜɥɟɧɢɹ ɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɷɜɬɟɤɬɢɤɢ ɧɚ ɨɫɧɨɜɟ ɜɢɫɦɭɬɚ. ɉɪɢ ɷɬɨɦ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɩɪɢ ɤɨɦɧɚɬɧɨɣ ɬɟɦɩɟɪɚɬɭɪɟ ɩɨɫɥɟ ɬɪɟɯ ɰɢɤɥɨɜ ɭɦɟɧɶɲɚɟɬɫɹ ɩɨɱɬɢ ɧɚ ɩɨɪɹɞɨɤ. ɉɪɢ ɩɨɫɥɟɞɭɸɳɢɯ ɰɢɤɥɚɯ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ, ɤɚɤ ɜɢɞɧɨ ɢɡ ɪɢɫ. 5, ɯɚɪɚɤɬɟɪ ɢɡɦɟɧɟɧɢɹ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɹ ɜ ɡɚɜɢɫɢɦɨɫɬɢ ɨɬ ɬɟɦɩɟɪɚɬɭɪɵ ɤɚɱɟɫɬɜɟɧɧɨ ɪɟɡɤɨ ɦɟɧɹɟɬɫɹ. Ɍɚɤ, ɩɪɢ ɩɨɜɵɲɟɧɢɢ ɬɟɦɩɟɪɚɬɭɪɵ ɩɪɢɦɟɪɧɨ ɞɨ 520 K ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɩɥɚɜɧɨ ɩɨɧɢɠɚɟɬɫɹ. ɉɪɢ ɞɚɥɶɧɟɣɲɟɦ ɭɜɟɥɢɱɟɧɢɢ ɬɟɦɩɟɪɚɬɭɪɵ ɪɨɫɬ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɭɫɤɨɪɹɟɬɫɹ ɢ ɩɪɢ ɩɪɢɛɥɢɠɟɧɢɢ ɤ ɬɟɦɩɟɪɚɬɭɪɟ ɩɥɚɜɥɟɧɢɹ ɷɜɬɟɤɬɢɤɢ ɧɚ ɨɫɧɨɜɟ ɜɢɫɦɭɬɚ ɨɧɨ ɪɟɡɤɨ ɩɚɞɚɟɬ ɩɨɞɨɛɧɨ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɸ ɱɢɫɬɨɝɨ ɜɢɫɦɭɬɚ. ɗɬɨ ɨɛɴɹɫɧɹɟɬɫɹ ɬɟɦ, ɱɬɨ ɩɪɢ ɩɪɢɛɥɢɠɟɧɢɢ ɤ ɬɟɦɩɟɪɚɬɭɪɟ ɩɥɚɜɥɟɧɢɹ ɷɜɬɟɤɬɢɤɢ ɪɚɫɬɜɨɪɢɦɨɫɬɶ ɤɨɦɩɨɧɟɧɬɨɜ ɜɨɡɪɚɫɬɚɟɬ ɜ ɫɨɨɬɜɟɬɫɬɜɢɢ ɫ ɢɯ ɮɚɡɨɜɨɣ ɞɢɚɝɪɚɦɦɨɣ ɢ ɩɪɢ ɞɨɫɬɢɠɟɧɢɢ ɷɜɬɟɤɬɢɱɟɫɤɨɣ ɬɟɦɩɟɪɚɬɭɪɵ ɩɪɨɢɫɯɨɞɢɬ ɨɛɪɚɡɨɜɚɧɢɟ ɷɜɬɟɤɬɢɱɟɫɤɨɝɨ ɫɩɥɚɜɚ, ɱɬɨ ɢ ɩɪɢɜɨɞɢɬ ɤ ɡɚɦɟɬɧɨɦɭ ɢɡɦɟɧɟɧɢɸ ɨɛɳɟɝɨ ɷɥɟɤɬɪɨ58
ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

R, Ω

T, K
Ɋɢɫ. 4. ɂɡɦɟɧɟɧɢɟ ɷɥɟɤɬɪɢɱɟɫɤɨɝɨ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ Ge—Bi—Ge ɩɪɢ ɩɟɪɜɵɯ ɬɪɟɯ ɰɢɤɥɚɯ ɧɚɝɪɟɜ (Ŷ — 1, Ÿ — 2, Ɣ — 3) — ɨɯɥɚɠɞɟɧɢɟ (Ƒ —1, Δ — 2, ż — 3) Fig. 4. Variation of the electrical resistance of Ge—Bi—Ge layered film system during initial three heat cycles (Ŷ — 1, Ÿ— 2, Ɣ — 3) and cooling (Ƒ — 1, Δ — 2, ż — 3)

R, Ω Tg ΔT Ts

T, K
Ɋɢɫ. 5. Ɂɚɜɢɫɢɦɨɫɬɶ ɷɥɟɤɬɪɢɱɟɫɤɨɝɨ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ Ge—Bi—Ge ɨɬ ɬɟɦɩɟɪɚɬɭɪɵ ɜ ɰɢɤɥɚɯ ɧɚɝɪɟɜ (Ÿ — 5, ź — 6, • — 7, Ŷ — 8) — ɨɯɥɚɠɞɟɧɢɟ (Δ — 5, ∇ — 6, ż — 7, Ƒ — 8 ) Fig. 5. Dependence of electrical resistance of Ge—Bi—Ge layered film system versus temperature at heating cycles (Ÿ — 5,ź — 6, • — 7, Ŷ — 8) and cooling (Δ — 5, ∇ — 6, ż — 7, Ƒ — 8)

ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

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ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ. Ⱦɚɥɶɧɟɣɲɟɟ ɢɡɦɟɧɟɧɢɟ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɩɨɞɬɜɟɪɠɞɚɟɬ ɬɚɤɭɸ ɬɪɚɤɬɨɜɤɭ ɢ ɭɤɚɡɵɜɚɟɬ ɧɚ ɬɨ, ɱɬɨ ɨɫɧɨɜɧɵɟ ɩɪɨɰɟɫɫɵ ɮɨɪɦɢɪɨɜɚɧɢɹ ɫɩɥɚɜɚ ɭɠɟ ɩɨɫɥɟ 5-ɝɨ ɰɢɤɥɚ ɩɪɚɤɬɢɱɟɫɤɢ ɡɚɜɟɪɲɢɥɢɫɶ ɩɨ ɜɫɟɣ ɬɨɥɳɢɧɟ ɫɥɨɢɫɬɨɣ ɫɢɫɬɟɦɵ. ɉɪɢ ɨɯɥɚɠɞɟɧɢɢ ɫɨɩɪɨɬɢɜɥɟɧɢɟ ɜɨɡɪɚɫɬɚɟɬ ɢ ɩɨ ɞɨɫɬɢɠɟɧɢɢ ɬɟɦɩɟɪɚɬɭɪɵ ɨɤɨɥɨ 465 K ɩɪɨɢɫɯɨɞɢɬ ɨɛɭɫɥɨɜɥɟɧɧɨɟ ɤɪɢɫɬɚɥɥɢɡɚɰɢɟɣ ɩɟɪɟɨɯɥɚɠɞɟɧɧɨɝɨ ɷɜɬɟɤɬɢɱɟɫɤɨɝɨ ɪɚɫɩɥɚɜɚ ɫɤɚɱɤɨɨɛɪɚɡɧɨɟ ɭɜɟɥɢɱɟɧɢɟ ɷɥɟɤɬɪɨɫɨɩɪɨɬɢɜɥɟɧɢɹ ɩɨɱɬɢ ɜ 3 ɪɚɡɚ. ȼ ɞɚɥɶɧɟɣɲɟɦ ɩɪɢ ɤɚɠɞɨɦ ɩɨɫɥɟɞɭɸɳɟɦ ɰɢɤɥɟ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ ɤɚɱɟɫɬɜɟɧɧɵɣ ɯɚɪɚɤɬɟɪ ɢɡɦɟɧɟɧɢɹ ɫɨɩɪɨɬɢɜɥɟɧɢɹ ɫɨɯɪɚɧɹɟɬɫɹ ɢ ɬɟɦɩɟɪɚɬɭɪɚ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɧɟ ɦɟɧɹɟɬɫɹ. ɇɚɛɥɸɞɚɟɦɵɣ ɬɟɦɩɟɪɚɬɭɪɧɵɣ ɝɢɫɬɟɪɟɡɢɫ ɩɥɚɜɥɟɧɢɟ—ɤɪɢɫɬɚɥɥɢɡɚɰɢɹ ɞɚɟɬ ɜɟɥɢɱɢɧɭ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɜ ɢɫɫɥɟɞɭɟɦɨɣ ɫɢɫɬɟɦɟ ΔT = Ts – Tg = 94 K. Ɋɟɧɬɝɟɧɨɝɪɚɮɢɱɟɫɤɢɟ ɢɫɫɥɟɞɨɜɚɧɢɹ ɢɫɫɥɟɞɭɟɦɨɣ ɫɢɫɬɟɦɵ ɩɨɫɥɟ ɰɢɤɥɨɜ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ ɩɨɤɚɡɵɜɚɸɬ (ɪɢɫ. 6), ɱɬɨ ɩɥɟɧɤɢ ɝɟɪɦɚɧɢɹ ɢɦɟɸɬ ɩɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɭɸ ɫɬɪɭɤɬɭɪɭ. Ɉɰɟɧɤɢ ɨɛɥɚɫɬɢ ɤɨɝɟɪɟɧɬɧɨɝɨ ɪɚɫɫɟɹɧɢɹ ɩɨ ɭɲɢɪɟɧɢɸ ɥɢɧɢɢ (111) Ge ɞɚɸɬ ɡɧɚɱɟɧɢɹ ~30 ɧɦ. ȼ ɬɨ ɠɟ ɜɪɟɦɹ, ɤɚɤ ɭɠɟ ɛɵɥɨ ɩɨɤɚɡɚɧɨ, ɧɟɩɨɫɪɟɞɫɬɜɟɧɧɨ ɩɨɫɥɟ ɩɪɟɩɚɪɢɪɨɜɚɧɢɹ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ ɩɥɟɧɤɢ ɝɟɪɦɚɧɢɹ ɹɜɥɹɥɢɫɶ ɚɦɨɪɮɧɵɦɢ. Ʉɪɢɫɬɚɥɥɢɡɚɰɢɹ ɬɚɤɢɯ ɩɥɟɧɨɤ ɩɪɨɢɫɯɨɞɢɬ, ɤɚɤ ɢɡɜɟɫɬɧɨ [4], ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɚɯ ɜɵɲɟ 700 K. ɋɥɟɞɨɜɚɬɟɥɶɧɨ, ɧɚɝɪɟɜ ɞɨ ɬɟɦɩɟɪɚɬɭɪ ~600 K, ɤɨɬɨɪɵɟ ɢɫɫɥɟɞɨɜɚɥɢɫɶ ɜ ɞɚɧɧɨɣ ɪɚɛɨɬɟ, ɧɟ ɞɨɥɠɟɧ ɩɪɢɜɨɞɢɬɶ ɤ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɩɥɟɧɨɤ ɝɟɪɦɚɧɢɹ. Ɍɚɤ, ɞɥɢɬɟɥɶɧɵɣ ɨɬɠɢɝ ɱɢɫɬɵɯ ɝɟɪɦɚɧɢɟɜɵɯ ɩɥɟɧɨɤ ɧɚ ɩɪɨɬɹɠɟɧɢɢ 15 ɱ ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɟ ~610 K ɢɧɢɰɢɢɪɭɟɬ ɥɢɲɶ ɱɚɫɬɢɱɧɭɸ ɢɯ ɤɪɢɫɬɚɥɥɢɡɚɰɢɸ (ɪɢɫ. 2, ɛ). ȼɢɞɧɨ, ɱɬɨ ɪɚɡɦɟɪ ɡɟɪɧɚ ɬɚɤɢɯ ɩɥɟɧɨɤ ɫɭɳɟɫɬɜɟɧɧɨ ɦɟɧɶɲɟ, ɱɟɦ ɧɚɛɥɸɞɚɟɦɵɣ ɪɟɧɬɝɟɧɨɝɪɚɮɢɱɟɫɤɢ ɞɥɹ

I, ɢɦɩ/ɫ

2θ, ɝɪɚɞ

Ɋɢɫ. 6. Ⱦɢɮɪɚɤɬɨɝɪɚɦɦɚ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɵ Ge—Bi—Ge ɩɨɫɥɟ ɬɟɪɦɢɱɟɫɤɨɣ ɨɛɪɚɛɨɬɤɢ
Fig. 6. X-Ray diffraction of Ge—Bi—Ge layered film system after thermal processing

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ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

ɫɥɨɢɫɬɵɯ ɩɥɟɧɨɱɧɵɯ ɫɢɫɬɟɦ. ɋɥɟɞɨɜɚɬɟɥɶɧɨ, ɤɪɢɫɬɚɥɥɢɡɚɰɢɹ ɝɟɪɦɚɧɢɹ ɜ ɫɥɨɢɫɬɨɣ ɩɥɟɧɨɱɧɨɣ ɫɢɫɬɟɦɟ ɩɪɢ ɬɟɦɩɟɪɚɬɭɪɚɯ ɦɟɧɟɟ 600 K, ɜɟɪɨɹɬɧɨ, ɨɛɭɫɥɨɜɥɟɧɚ ɩɪɨɰɟɫɫɚɦɢ ɩɥɚɜɥɟɧɢɹ ɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɷɜɬɟɤɬɢɤɢ ɧɚ ɨɫɧɨɜɟ ɜɢɫɦɭɬɚ ɜ ɰɢɤɥɚɯ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ. ɉɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɚɹ ɫɬɪɭɤɬɭɪɚ ɝɟɪɦɚɧɢɹ ɫɩɨɫɨɛɫɬɜɭɟɬ ɞɢɮɮɭɡɢɢ ɜɢɫɦɭɬɚ ɩɨ ɝɪɚɧɢɰɚɦ ɡɟɪɟɧ ɩɨ ɜɫɟɣ ɬɨɥɳɢɧɟ ɫɥɨɢɫɬɨɣ ɫɢɫɬɟɦɵ. ɗɬɢɦ, ɨɱɟɜɢɞɧɨ, ɢ ɨɛɴɹɫɧɹɟɬɫɹ ɯɚɪɚɤɬɟɪ ɬɟɦɩɟɪɚɬɭɪɧɨɣ ɡɚɜɢɫɢɦɨɫɬɢ ɫɨɩɪɨɬɢɜɥɟɧɢɹ, ɩɨɞɨɛɧɵɣ ɬɚɤɨɜɨɦɭ ɞɥɹ ɫɢɫɬɟɦɵ Al—Bi—Al, ɩɨɫɥɟ ɦɧɨɝɢɯ ɰɢɤɥɨɜ ɧɚɝɪɟɜ—ɨɯɥɚɠɞɟɧɢɟ. Ⱦɟɬɚɥɶɧɨ ɩɪɨɰɟɫɫɵ ɜ ɫɢɫɬɟɦɟ ɩɥɟɧɤɚ ɜɢɫɦɭɬɚ ɦɟɠɞɭ ɩɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɢɦɢ ɩɥɟɧɤɚɦɢ ɝɟɪɦɚɧɢɹ ɧɟ ɨɛɫɭɠɞɚɸɬɫɹ, ɩɨɫɤɨɥɶɤɭ ɨɧɢ ɪɚɫɫɦɨɬɪɟɧɵ ɜ ɪɚɛɨɬɟ [3] ɞɥɹ ɫɢɫɬɟɦɵ Al—Bi—Al, ɢɦɟɸɳɟɣ ɬɚɤɭɸ ɠɟ ɮɚɡɨɜɭɸ ɞɢɚɝɪɚɦɦɭ. ȼɵɜɨɞɵ ȼ ɪɟɡɭɥɶɬɚɬɟ ɩɪɨɜɟɞɟɧɧɵɯ ɢɫɫɥɟɞɨɜɚɧɢɣ ɭɫɬɚɧɨɜɥɟɧɚ ɫɬɟɩɟɧɶ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɱɚɫɬɢɰ ɜɢɫɦɭɬɚ ɜ ɤɨɧɬɚɤɬɟ ɫ ɚɦɨɪɮɧɵɦɢ ɢ ɩɨɥɢɤɪɢɫɬɚɥɥɢɱɟɫɤɢɦɢ ɩɥɟɧɤɚɦɢ ɝɟɪɦɚɧɢɹ, ɤɨɬɨɪɚɹ ɫɨɫɬɚɜɥɹɟɬ ɨɤɨɥɨ 94 K. Ɉɩɪɟɞɟɥɟɧ ɭɝɨɥ ɫɦɚɱɢɜɚɧɢɹ ɠɢɞɤɢɦɢ ɱɚɫɬɢɰɚɦɢ ɜɢɫɦɭɬɚ ɚɦɨɪɮɧɵɯ ɩɥɟɧɨɤ ɝɟɪɦɚɧɢɹ, ɪɚɜɧɵɣ 68°. ɉɨɥɭɱɟɧɧɵɟ ɪɟɡɭɥɶɬɚɬɵ ɯɨɪɨɲɨ ɫɨɝɥɚɫɭɸɬɫɹ ɫ ɢɦɟɸɳɢɦɢɫɹ ɞɚɧɧɵɦɢ ɩɨ ɨɛɨɛɳɟɧɧɨɣ ɡɚɜɢɫɢɦɨɫɬɢ ɜɟɥɢɱɢɧɵ ɩɟɪɟɨɯɥɚɠɞɟɧɢɹ ɨɬ ɭɝɥɚ ɫɦɚɱɢɜɚɧɢɹ ɞɥɹ ɞɪɭɝɢɯ ɤɨɧɬɚɤɬɧɵɯ ɫɢɫɬɟɦ [1]. ɉɨɤɚɡɚɧɚ ɷɮɮɟɤɬɢɜɧɨɫɬɶ ɢɫɩɨɥɶɡɨɜɚɧɢɹ ɫɥɨɢɫɬɵɯ ɩɥɟɧɨɱɧɵɯ ɫɢɫɬɟɦ ɞɥɹ ɨɩɪɟɞɟɥɟɧɢɹ ɩɪɟɞɟɥɶɧɵɯ ɩɟɪɟɨɯɥɚɠɞɟɧɢɣ ɜ ɫɢɫɬɟɦɚɯ ɷɜɬɟɤɬɢɱɟɫɤɨɝɨ ɬɢɩɚ. ɊȿɁɘɆȿ. Ⱦɨɫɥɿɞɠɟɧɨ ɦɟɯɚɧɿɡɦ ɤɨɧɞɟɧɫɚɰɿʀ ɜ ɩɥɿɜɤɨɜɿɣ ɫɢɫɬɟɦɿ Bi—Ge ɿ ɡɦɿɧɚ ɟɥɟɤɬɪɢɱɧɨɝɨ ɨɩɨɪɭ ɜ ɲɚɪɭɜɚɬɿɣ ɩɥɿɜɤɨɜɿɣ ɫɢɫɬɟɦɿ Ge—Bi—Ge ɭ ȼɢɡɧɚɱɟɧɨ ɫɬɭɩɿɧɶ ɯɨɞɿ ɰɢɤɥɿɜ ɧɚɝɪɿɜɚɧɧɹ—ɨɯɨɥɨɞɠɟɧɧɹ. ɩɟɪɟɨɯɨɥɨɞɠɟɧɧɹ ɩɪɢ ɤɪɢɫɬɚɥɿɡɚɰɿʀ ɜɿɫɦɭɬɭ ɜ ɤɨɧɬɚɤɬɿ ɡ ɚɦɨɪɮɧɢɦ ɿ ɩɨɥɿɤɪɢɫɬɚɥɿɱɧɢɦ ɝɟɪɦɚɧɿɽɦ — 94 K ɿ ɤɭɬ ɡɦɨɱɭɜɚɧɧɹ ɜ ɨɫɬɪɿɜɰɟɜɢɯ ɩɥɿɜɤɚɯ ɜɿɫɦɭɬɭ ɧɚ ɚɦɨɪɮɧɿɣ ɝɟɪɦɚɧɿɽɜɿɣ ɩɿɞɤɥɚɞɰɿ — 68°. Ɉɬɪɢɦɚɧɿ ɪɟɡɭɥɶɬɚɬɢ ɞɨɛɪɟ ɭɡɝɨɞɠɭɸɬɶɫɹ ɡ ɧɚɹɜɧɢɦɢ ɞɚɧɢɦɢ ɩɨ ɭɡɚɝɚɥɶɧɟɧɿɣ ɡɚɥɟɠɧɨɫɬɿ ɜɟɥɢɱɢɧɢ ɩɟɪɟɨɯɨɥɨɞɠɟɧɧɹ ɜɿɞ ɤɭɬɚ ɡɦɨɱɭɜɚɧɧɹ ɞɥɹ ɿɧɲɢɯ ɤɨɧɬɚɤɬɧɢɯ ɫɢɫɬɟɦ.

1. Gladkich N. T., Dukarov S. V., Sukhov V. N. Supercooling during metal crystallization under conditions close to weightlessness using island vacuum condensates // Zeitschrift für Metallkunde. — 1996. — No. 3. — Ɋ. 233— 239. 2. Ƚɥɚɞɤɢɯ ɇ. Ɍ., ɑɢɠɢɤ ɋ. ɉ., Ʌɚɪɢɧ ȼ. ɂ. ɢ ɞɪ. ɉɟɪɟɨɯɥɚɠɞɟɧɢɟ ɩɪɢ ɤɪɢɫɬɚɥɥɢɡɚɰɢɢ ɨɫɬɪɨɜɤɨɜɵɯ ɩɥɟɧɨɤ // ɂɡɜ. Ⱥɇ ɋɋɋɊ. Ɇɟɬɚɥɥɵ. — 1982. — ʋ 5. — ɋ. 196—211. 3. Bogatyrenko S. I., Voznyi A. V., Gladkikh N. T., Kryshtal A. P. Supercooling upon crystallization in layered Al—Bi—Al film system // The Physics of Metals and Metallography. — 2004. — 97, No. 3. — P. 273—281. 4. ɉɚɥɚɬɧɢɤ Ʌ. ɋ., ɉɚɩɢɪɨɜ ɂ. ɂ. Ɉɪɢɟɧɬɢɪɨɜɚɧɧɚɹ ɤɪɢɫɬɚɥɥɨɝɪɚɮɢɹ. — Ɇ.: Ɇɟɬɚɥɥɭɪɝɢɹ, 1964. — 408 ɫ.

ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40

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5. Ƚɥɚɞɤɢɯ ɇ. Ɍ., ɑɢɠɢɤ ɋ. ɉ., Ʌɚɪɢɧ ȼ. ɂ. ɢ ɞɪ. Ɇɟɬɨɞɵ ɨɩɪɟɞɟɥɟɧɢɹ ɫɦɚɱɢɜɚɧɢɹ ɜ ɜɵɫɨɤɨɞɢɫɩɟɪɫɧɵɯ ɫɢɫɬɟɦɚɯ // ɉɨɜɟɪɯɧɨɫɬɶ. Ɏɢɡɢɤɚ, ɯɢɦɢɹ, ɦɟɯɚɧɢɤɚ. — 1985. — ʋ 11. — ɋ. 124—131.

ɉɨɫɬɭɩɢɥɚ 12.10.07

Kolendovskiy M. M., Bogatyrenko S. I., Kryshtal O. P., Gladkikh N. T., Dukarov S. V., Samsonik O. L., Sukhov R. V. Supercooling upon crystallization of Bi films on Ge substrate
The condensation mechanism of Bi—Ge film system and variation of the electrical resistance in Ge—Bi—Ge layered film system during heating and cooling cycles has been investigated. The value of supercooling upon crystallization of Bi in contact with amorphous and polycrystalline Ge (~94 K) as well as the wetting angle in this system (68°) have been determined. The measured values are in a good agreement with literature data on summarized dependency of supercooling value versus the wetting angle.

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ISSN 0136-1732. Ⱥɞɝɟɡɢɹ ɪɚɫɩɥɚɜɨɜ ɢ ɩɚɣɤɚ ɦɚɬɟɪɢɚɥɨɜ, 2007. ȼɵɩ. 40