Gladkikh, N.T.Grebennik, I.P.Dukarov, S.V.2015-12-122015-12-121998Gladkikh N.T., Grebennik I.P., Dukarov S.V. Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films // Met. Phys. Adv. Tech. – 1998. – V. 17. – P. 725–734.https://ekhnuir.karazin.ua/handle/123456789/11055The results of an electronographic investigation of the Ni—GaAs double-layer films phase composition depending on temperature at condensation of Ni at GaAs are presented. The structure and number of the phases being formed have been shown to depend both on ther-mal conditions at interaction of the Ni and GaAs layers and on the Ni to GaAs layer mass ratio: mNi//mGaAs = (0.5; 1.2).enThin filmsgallium arsenidecrystal structureResearch Subject Categories::NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfacesArticle