Ageev, L.A.Beloshenko, K.S.Makovetsky, E.D.Miloslavsky, V.K.2012-11-212012-11-212007Funct. Mater., 2007, Vol. 14, № 3, pp.290-294.1027-5495https://ekhnuir.karazin.ua/handle/123456789/7091A setup for observation of the nonlinear self-diffraction effect has been described. A semiconductor laser (P approximately 50mW, wavelength approximately 660nm) is used as a radiation source. The laser beam is divided into two beams by a Wollaston prism, the beams pass through a polarizer and positive lens, then they intersect and create an interference. Using a microscope, the interference may be observed in an increased scale on a remote screen. The interference is registered in a thin photosensitive As2S3-Ag film prepared by vacuum evaporation. We have shown an opportunity to observe the self-diffraction from recorded diffraction grating with linear grooves and from two-dimensional grating induced as a result of second exposure after turning the convergence plane of the interfering beams by 90 degrees.enоптикакафедра физической оптикисамодифракциядифракционная решеткаголографиялазертонкая пленкаСульфид мышьякаArticle