Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films

dc.contributor.author	Gladkikh, N.T.
dc.contributor.author	Grebennik, I.P.
dc.contributor.author	Dukarov, S.V.
dc.date.accessioned	2015-12-12T19:32:24Z
dc.date.available	2015-12-12T19:32:24Z
dc.date.issued	1998
dc.description.abstract	The results of an electronographic investigation of the Ni—GaAs double-layer films phase composition depending on temperature at condensation of Ni at GaAs are presented. The structure and number of the phases being formed have been shown to depend both on ther-mal conditions at interaction of the Ni and GaAs layers and on the Ni to GaAs layer mass ratio: mNi//mGaAs = (0.5; 1.2).	ru_RU
dc.identifier.citation	Gladkikh N.T., Grebennik I.P., Dukarov S.V. Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films // Met. Phys. Adv. Tech. – 1998. – V. 17. – P. 725–734.	ru_RU
dc.identifier.uri	https://ekhnuir.karazin.ua/handle/123456789/11055
dc.language.iso	en	ru_RU
dc.subject	Thin films	ru_RU
dc.subject	gallium arsenide	ru_RU
dc.subject	crystal structure	ru_RU
dc.subject	Research Subject Categories::NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfaces	ru_RU
dc.title	Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films	ru_RU
dc.type	Article	ru_RU

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