Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films

dc.contributor.author	Gladkikh, N.T.
dc.contributor.author	Grebennik, I.P.
dc.contributor.author	Dukarov, S.V.
dc.date.accessioned	2015-12-12T19:32:24Z
dc.date.available	2015-12-12T19:32:24Z
dc.date.issued	1998
dc.description.abstract	The results of an electronographic investigation of the Ni—GaAs double-layer films phase composition depending on temperature at condensation of Ni at GaAs are presented. The structure and number of the phases being formed have been shown to depend both on ther-mal conditions at interaction of the Ni and GaAs layers and on the Ni to GaAs layer mass ratio: mNi//mGaAs = (0.5; 1.2).
dc.identifier.citation	Gladkikh N.T., Grebennik I.P., Dukarov S.V. Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films // Met. Phys. Adv. Tech. – 1998. – V. 17. – P. 725–734.
dc.identifier.uri	https://ekhnuir.karazin.ua/handle/123456789/11055
dc.language.iso	en
dc.subject	Thin films
dc.subject	gallium arsenide
dc.subject	crystal structure
dc.subject	Research Subject Categories::NATURAL SCIENCES::Physics::Condensed matter physics::Surfaces and interfaces
dc.title	Electronographic investigation of the temperature effect on the phase formation in thin double-layer Ni/GaAs films
dc.type	Article

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