Rf discharge dissociative mode in NF3 and SiH4

Ескіз

Дата

2007-10

Назва журналу

Номер ISSN

Назва тому

Видавець

JOURNAL OF PHYSICS D: APPLIED PHYSICS

Анотація

This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ -mode and dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode.

Опис

Ключові слова

plasma physics, gas discharges

Бібліографічний опис

J. Phys. D: Appl. Phys. 40 (2007) 6631–6640

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