Rf discharge dissociative mode in NF3 and SiH4
dc.contributor.author | Lisovskiy, V. | |
dc.contributor.author | Booth, Jean-Paul | |
dc.contributor.author | Landry, K. | |
dc.contributor.author | Douai, D. | |
dc.contributor.author | Cassagne, V. | |
dc.contributor.author | Yegorenkov, V. | |
dc.date.accessioned | 2010-11-17T19:42:26Z | |
dc.date.available | 2010-11-17T19:42:26Z | |
dc.date.issued | 2007-10 | |
dc.description.abstract | This paper shows that the rf capacitive discharge in NF3 and SiH4 can burn in three possible modes: weak-current α-mode, strong-current γ -mode and dissociative δ -mode. This new dissociative δ-mode is characterized by a high dissociation degree of gas molecules (actually up to 100% in NF3 and up to 70% in SiH4), higher resistivity and a large discharge current. On increasing rf voltage first we may observe a weak-current α-mode (at low NF3 pressure the α-mode is absent). At rather high rf voltage when a sufficiently large number of high energy electrons appear in the discharge, an intense dissociation of gas molecules via electron impact begins, and the discharge experiences a transition to the dissociative δ-mode. The dissociation products of NF3 and SiH4 molecules possess lower ionization potentials, and they form an easily ionized admixture to the main gas. At higher rf voltages when near-electrode sheaths are broken down, the discharge experiences a transition to the strong-current γ -mode. | en |
dc.description.sponsorship | - | en |
dc.identifier.citation | J. Phys. D: Appl. Phys. 40 (2007) 6631–6640 | en |
dc.identifier.uri | https://ekhnuir.karazin.ua/handle/123456789/1700 | |
dc.language.iso | en | en |
dc.publisher | JOURNAL OF PHYSICS D: APPLIED PHYSICS | en |
dc.relation.ispartofseries | ;doi:10.1088/0022-3727/40/21/023 | |
dc.subject | plasma physics | en |
dc.subject | gas discharges | en |
dc.title | Rf discharge dissociative mode in NF3 and SiH4 | en |
dc.type | Article | en |
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